Stress evaluation on hetero-epitaxial 3C-SiC film on (100) Si substrates
نویسندگان
چکیده
SiC is a candidate material for microand nano-electromechanical systems (MEMS and NEMS). In order to understand the impact that the growth rate has on the residual stress of CVDgrown 3C-SiC hetero-epitaxial films on Si substrates, growth experiments were performed and the resulting stress was evaluated. The film thickness was held constant at ~2.5 μm independent of the growth rate so as to allow for direct comparison of films as a function of the growth rate. Supported by profilometry, Raman and micro-machined free-standing structures, this study shows that the growth rate is a fundamental parameter for the low-defect and the low-stress hetero-epitaxial growth process of 3C-SiC on Si substrates.
منابع مشابه
Growth rate effect on 3C-SiC film residual stress on (100) Si substrates
SiC is a candidate material for microand nano-electromechanical systems (MEMS and NEMS). In order to understand the impact that the growth rate has on the residual stress of CVD-grown 3C-SiC hetero-epitaxial films on Si substrates, growth experiments were performed and the resulting stress was evaluated. Film growth was performed using a two-step growth process with propane and silane as the C ...
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